 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| KSP2907A KSP2907A General Purpose Transistor * Collector-Emitter Voltage: VCEO= 60V * Collector Power Dissipation: PC (max)=625mW * Refer to KSP2907 for graphs TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -60 -5 -600 625 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10A, IE=0 IC= -10mA, IB=0 IE= -10A, IC=0 VCB= -50V, IE=0 IC= -0.1mA, VCE= -10V VCE= -10V, IC= -1mA, VCE= -10V , IC= -10mA VCE= -10V, *IC= -150mA VCE= -10V, *IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 75 100 100 100 50 Min. -60 -60 -5 -10 Typ. Max. Units V V V nA 300 -0.4 -1.6 -1.3 -2.6 8 V V V V pF MHz ns ns VCE (sat) VBE (sat) Cob fT tON tOFF * Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Output Capacitance * Current Gain Bandwidth Product Turn On Time Turn Off Time * Pulse Test: Pulse Width300s, Duty Cycle2% * Also available as and PN2907 (c)2002 Fairchild Semiconductor Corporation Rev. A2, February 2002 KSP2907A Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -10V IC = 10 IB hFE, DC CURRENT GAIN -1 VBE(sat) 100 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 1000 IE = 0 f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = -20V Cob [pF], CAPACITANCE 10 100 1 0.1 -1 -10 -100 10 -1 -10 -100 -1000 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A2, February 2002 KSP2907A Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, February 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H4 |
Price & Availability of KSP2907A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |